| PART |
Description |
Maker |
| NESG2030M04-T2 NESG2030M04 |
NONLINEAR MODEL
NPN SiGe HIGH FREQUENCY TRANSISTOR
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
NEC[NEC]
NEC, Corp.
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2030M04-T2-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
Duracell
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| HA31005ANP HA31005ANPTL-E |
SiGe MMIC High Frequency Power Amplifier
|
Renesas Electronics Corporation
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| 15GN01FA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC1815-X-T92-B 2SC1815-X-T92-K 2SC1815 2SC1815G-X |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
150 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
UNISONIC TECHNOLOGIES CO LTD
|
| MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier
From old datasheet system
900MHz SiGe, High IP3, Low-Noise Amplifiers
900MHz SiGe / High IP3 / Low-Noise Amplifiers
Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
